fig3

Figure 3. Junction potential–based temperature sensing of the MXene/EtDAB·4PbI₂ junction and its intrinsic signal decoupling performance. (A) Schematic illustration of the junction potential–based mechanism; (B) Temperature-dependent open-circuit voltage change (ΔV_oc); (C) Normalized electrical conductivity of MXene and EtDAB·4PbI₂ vs. temperature; (D) Schematic illustration of the temperature-induced band modulation mechanism at the MXene/EtDAB·4PbI₂ junction; (E) Repeatability of the temperature module during thirty heating–cooling cycles, with high-resolution temperature response to minute temperature variations (inset); (F) Pressure response measured at different ambient temperatures; (G) Temperature response under external mechanical loading; (H) Radar plot comparing key performance metrics of this work with reported pressure–temperature sensors. The error bars represent the standard deviation based on a sample size of three (n = 3). CBM: Conduction band minimum; VBM: valence band maximum; LOD: limit of detection.